Atomic layer deposition with plasma source

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United States of America Patent

PATENT NO 9868131
SERIAL NO

14794159

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Abstract

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The invention relates to method including operating a plasma atomic layer deposition reactor configured to deposit material in a reaction chamber on at least one substrate by sequential self-saturating surface reactions, and allowing gas from an inactive gas source to flow into a widening radical in-feed part opening towards the reaction chamber substantially during a whole deposition cycle. The invention also relates to a corresponding apparatus.

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Patent Owner(s)

  • PICOSUN OY

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kilpi, Vaino Espoo, FI 11 1248
Kostamo, Juhana Espoo, FI 33 3150
Li, Wei-Min Espoo, FI 27 3631
Lindfors, Sven Espoo, FI 41 6950
Malinen, Timo Espoo, FI 18 999

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