Silicon single crystal pulling apparatus comprising a vertically movable supporting member holding the heater and shield
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United States of America Patent
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Jan 16, 2018
Grant Date -
Jul 7, 2016
app pub date -
Sep 1, 2014
filing date -
Oct 29, 2013
priority date (Note) -
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status (Latency Note)
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Abstract
The present invention is a silicon single crystal pulling apparatus based on Czochralski method, including a crucible for receiving a raw material, a heater for heating the raw material into a raw material melt, a main chamber accommodating the crucible and the heater, a shield disposed between the heater and the main chamber for shielding a radiant heat from the heater, and a supporting member holding the heater and the shield from below, the supporting member being movable vertically whereby the heater and the shield can move vertically together. As a result, there is provided a silicon single crystal pulling apparatus that facilitates the adjustment of thermal history, the improvement of pulling rate of a silicon single crystal, and the reduction in oxygen concentration.
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