Active matrix substrate and method for manufacturing the same

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United States of America Patent

PATENT NO 9869917
SERIAL NO

15323440

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Abstract

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An active matrix substrate in a liquid crystal panel of an FFS mode has a data line 24 including an amorphous Si film 122, an n+amorphous Si film 123, a main conductor part 133, and an IZO film 141. The main conductor part 133 and the IZO film 141 are etched at a portion close to the end of a covered region of a photoresist 142, to form the n+amorphous Si film 123 larger than the main conductor part 133 and the IZO film 141. A pattern of a photomask for a source layer is made larger than a pattern of a photomask for a pixel electrode layer, to form the amorphous Si film 122 larger than the n+amorphous Si film 123. The main conductor part 133 is formed of a molybdenum-based material, and in a layer over the data line 24, two-layered protective insulating films are formed such that a compressive stress is generated in one film and a tensile stress is generated in the other film. Accordingly, a high-yield active matrix substrate having a common electrode is provided.

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Patent Owner(s)

  • SHARP KABUSHIKI KAISHA

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kimoto, Hidenobu Sakai, JP 16 86
Seguchi, Yoshihiro Sakai, JP 10 38
Sugimoto, Takehisa Sakai, JP 3 7
Tarui, Tetsuya Sakai, JP 7 126

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