Semiconductor device and method of manufacturing the same

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United States of America Patent

PATENT NO 9871112
SERIAL NO

15464319

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Abstract

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A semiconductor device includes a substrate, a channel layer, a barrier layer, a source and a drain, a p-type nitride layer and a strain gate. The channel layer is disposed on the substrate. The barrier layer is disposed on the channel layer. The source and the drain are respectively disposed at two sides of the barrier layer. The p-type nitride layer is disposed on the barrier layer. The strain gate is disposed over the p-type nitride layer for tuning a first strain of the channel layer and a second strain of the barrier layer.

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Patent Owner(s)

Patent OwnerAddress
NATIONAL TAIWAN NORMAL UNIVERSITYNO 162 SEC 1 HEPING E RD DA’AN DIST TAIPEI CITY 10610

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chang, Chun-Yen Hsinchu County, TW 76 808
Cheng, Chun-Hu Tainan, TW 15 120
Chiu, Yu-Chien Kaohsiung, TW 15 81

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