Etchant solutions and method of use thereof
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United States of America Patent
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Jan 23, 2018
Issued Date -
N/A
app pub date -
Dec 22, 2015
filing date -
Dec 29, 2014
priority date (Note) -
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Abstract
Etching compositions and method of using the etching compositions comprising potassium hydroxide; one or more than one additional alkaline compounds selected from the group consisting of TEAH, TMAF and NH4OH; and water; or etching compositions comprising one or more than one inorganic alkali basic hydroxides selected from the group consisting of potassium hydroxide, cesium hydroxide, sodium hydroxide, rubidium hydroxide, or lithium hydroxide; optionally one or more than one additional alkaline compounds; water; and optionally one or more corrosion inhibitors; wherein the composition preferentially etches silicon present on a substrate as compared to silicon dioxide present on said substrate.
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International Classification(s)
- C09K:MATERIALS FOR APPLICATIONS NOT OTHERWISE PROVIDED ....
- C03C:CHEMICAL COMPOSITION OF GLASSES, GLAZES, OR VITREO....
- H01L:SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICE....
- C23F:NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM S....
- B44C:PRODUCING DECORATIVE EFFECTS
- C25F:PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIAL....
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