Apparatus and method for spatial atomic layer deposition
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United States of America Patent
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Jan 23, 2018
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Jun 1, 2016
filing date -
Dec 15, 2015
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Abstract
The present disclosure provides a semiconductor fabrication apparatus in accordance with one embodiment. The apparatus includes a processing chamber; a wafer stage configured in the processing chamber, the wafer stage is operable to secure and rotate a plurality of wafers around an axis; a first chemical delivery mechanism configured in the processing chamber to provide a first chemical to a first reaction zone in the processing chamber; and a second chemical delivery mechanism configured in the processing chamber to provide a second chemical to a second reaction zone in the processing chamber. The second chemical delivery mechanism includes an edge chemical injector and a first radial chemical injector.
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