Method of forming an integrated circuit and related integrated circuit

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United States of America Patent

PATENT NO 9874689
SERIAL NO

15111418

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Abstract

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A method (100) of forming an integrated circuit is disclosed. The method comprises: (i) forming at least a pair of optoelectronic devices from at least a first wafer material arranged on a semiconductor substrate, the first wafer material different to silicon; (ii) etching the first wafer material to form a first recess to be filled with a second material; (iii) processing (104) the second material to form a waveguide for coupling the pair of optoelectronic devices to define an optical interconnect; and (iv) bonding (106) at least one partially processed CMOS device layer having at least one transistor to the second semiconductor substrate to form the integrated circuit, the partially processed CMOS device layer arranged adjacent to the optical interconnect. An integrated circuit is also disclosed.

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Patent Owner(s)

  • MASSACHUSETTS INSTITUTE OF TECHNOLOGY (MIT);MASSACHUSETTS INSTITUTE OF TECHNOLOGY;NANYANG TECHNOLOGICAL UNIVERSITY;NATIONAL UNIVERSITY OF SINGAPORE

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chiah, Siau Ben Singapore, SG 5 16
Chua, Soo-Jin Singapore, SG 8 80
Lee, Eng Kian Kenneth Singapore, SG 9 127
Michel, Jurgen Cambridge, US 66 1034
Peh, Li-Shiuan Singapore, SG 7 32
Wang, Bing Singapore, SG 375 3263
Zhang, Li Singapore, SG 2449 32460
Zhang, Wenjia Shanghai, CN 11 29
Zhu, Zhaomin Singapore, SG 7 28

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