Atomic layer deposition of films comprising Si(C)N using hydrazine, azide and/or silyl amine derivatives

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United States of America Patent

PATENT NO 9875889
SERIAL NO

15000116

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Abstract

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Provided are methods for the deposition of films comprising Si(C)N via atomic layer deposition processes. The methods include exposure of a substrate surface to a silicon precursor and a co-reagent comprising a compound selected from the group consisting of N═N═N—R, R2N—NR2, and (R3Si)qNH3-q, wherein q has a value of between 1 and 3, and each R is independently selected from organosilicons, C1-C6 substituted or un-substituted alkanes, branched or un-branched alkanes, substituted or un-substituted alkenes, branched or un-branched alkenes, substituted or un-substituted alkynes, branched or un-branched alkynes or substituted or un-substituted aromatics.

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Patent Owner(s)

  • APPLIED MATERIALS, INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Thompson, David San Jose, US 332 13667

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