Metal interconnect structure and method for fabricating the same

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United States of America Patent

PATENT NO 9875928
SERIAL NO

14682124

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Abstract

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A method for fabricating metal interconnect structure is disclosed. The method includes the steps of: providing a substrate having a first inter-metal dielectric (IMD) layer thereon; forming a metal interconnection in the first IMD layer; removing part of the first IMD layer; forming a spacer adjacent to the metal interconnection; and using the spacer as mask to remove part of the first IMD layer for forming an opening in the first IMD layer.

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Patent Owner(s)

  • UNITED MICROELECTRONICS CORP.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Liou, En-Chiuan Tainan, TW 155 703
Tung, Yu-Cheng Kaohsiung, TW 225 1060
Yang, Chih-Wei Kaohsiung, TW 113 1075

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