Forming a stacked capacitor
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United States of America Patent
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Jan 23, 2018
Issued Date -
N/A
app pub date -
Jun 9, 2016
filing date -
Jun 9, 2016
priority date (Note) -
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Abstract
Stacked capacitor structures using TSVs are provided. In one aspect, a stacked capacitor structure includes: a first substrate having at least one first capacitor formed in a TSV in the first substrate; and a second substrate, bonded to the first substrate, having at least one second capacitor formed in a TSV in the second substrate, wherein the first capacitor and the second capacitor each comprises a first electrode and a dielectric that both surround a second electrode that is at a core of the TSV, wherein the dielectric separates the first electrode from the second electrode, and wherein the second substrate is bonded to the first substrate such that the first capacitor is stacked on the second capacitor. A method of forming a stacked capacitor structure is also provided.
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