Switching device

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United States of America Patent

PATENT NO 9875976
APP PUB NO 20170194269A1
SERIAL NO

14985393

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Abstract

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A semiconductor device includes a first doping region, a second doping region, and a channel region. The first doping region is doped with a first type of dopant. The second doping region is doped with the first type of dopant. The channel region is doped with a second type of dopant, wherein the channel region is configured to have a first region with a first concentration of the second type of dopant and a second region with a second concentration of the second type of dopant, and the second concentration is higher than the first concentration.

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Patent Owner(s)

  • TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Jin, Jun-De Hsinchu, TW 49 341

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