Semiconductor device and manufacturing method thereof
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United States of America Patent
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Jan 23, 2018
Grant Date -
Dec 7, 2017
app pub date -
Jun 1, 2016
filing date -
Jun 1, 2016
priority date (Note) -
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Abstract
A semiconductor device includes a first die, a second die bonding to the first die thereby forming a bonding interface, and a pad of the first die and exposed from a polymeric layer of the first die. The semiconductor device further has a conductive material on the pad and extended from the pad in a direction parallel to a stacking direction of the first die and the second die. In the semiconductor device, the conductive material extended to a top surface, which is vertically higher than a backside of the second die, wherein the backside is a surface opposite to the bonding interface.
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