Low profile reinforced package-on-package semiconductor device
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United States of America Patent
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Jan 23, 2018
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app pub date -
Dec 16, 2014
filing date -
Dec 16, 2014
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Abstract
The present disclosure provides semiconductor packages and methods for fabricating PoP semiconductor packages. The PoP semiconductor package may comprise a first semiconductor package, the first semiconductor package comprising an anodized metal lid structure comprising (i) a central cavity having a central cavity opening direction and (ii) at least one perimeter cavity having a perimeter cavity opening direction facing in an opposite direction of the central cavity opening direction, a first semiconductor device arranged in the central cavity of the anodized metal lid structure, a redistribution layer electrically coupled to the first semiconductor device, wherein a conductive trace formed in the redistribution layer is exposed to the at least one perimeter cavity, and solder material arranged in the at least one perimeter cavity, and a second semiconductor package, the second semiconductor package comprising at least one conductive post, wherein the at least one conductive post is electrically coupled to the solder material arranged in the at least one perimeter cavity.
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