Method for producing an optoelectronic semiconductor chip

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United States of America Patent

PATENT NO 9876001
SERIAL NO

15462710

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Abstract

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A method for producing an optoelectronic semiconductor chip is disclosed. In an embodiment, the method includes providing a semiconductor body with a pixel region including different subpixel regions, each subpixel region having a radiation exit face, applying an electrically conductive layer onto the radiation exit face of a subpixel region, wherein the electrically conductive layer is suitable at least in part for forming a salt with a protic reactant, and depositing a conversion layer on the electrically conductive layer using an electrophoresis process, wherein the deposited conversion layer comprises pores.

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Patent Owner(s)

  • OSRAM OPTO SEMICONDUCTORS GMBH

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Goeoetz, Britta Regensburg, DE 33 204
Stoll, Ion Tegernheim, DE 37 151
von, Malm Norwin Nittendorf, DE 109 1032

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