CMOS compatible fuse or resistor using self-aligned contacts

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United States of America Patent

PATENT NO 9876009
SERIAL NO

15176258

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Abstract

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A semiconductor device includes dummy gate structures formed on a dielectric layer over a substrate and forming a gap therebetween. A trench silicide structure is formed in the gap on the dielectric layer and extends longitudinally beyond the gap on end portions. The trench silicide structure forms a resistive element. Self-aligned contacts are formed through an interlevel dielectric layer and land on the trench silicide structure beyond the gap on the end portions.

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Patent Owner(s)

  • INTERNATIONAL BUSINESS MACHINES CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Basker, Veeraraghavan S Schenectady, US 487 4282
Cheng, Kangguo Schenectady, US 3073 29791
Standaert, Theodorus E Clifton Park, US 302 2583
Wang, Junli Singerlands, US 492 2776

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