Single die output power stage using trench-gate low-side and LDMOS high-side MOSFETs, structure and method

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United States of America Patent

PATENT NO 9876012
SERIAL NO

14954854

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Abstract

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A voltage converter includes an output circuit having a high-side device and a low-side device which can be formed on a single die (a “PowerDie”). The high-side device can include a lateral diffused metal oxide semiconductor (LDMOS) while the low-side device can include a trench-gate vertical diffused metal oxide semiconductor (VDMOS). The voltage converter can further include a controller circuit on a different die which can be electrically coupled to, and co-packaged with the output circuit.

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Patent Owner(s)

Patent OwnerAddress
INTERSIL AMERICAS LLC1001 MURPHY RANCH ROAD MILPITAS CA 95035

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hebert, Francois San Mateo, US 171 2632

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