Single die output power stage using trench-gate low-side and LDMOS high-side MOSFETs, structure and method

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 9876012
SERIAL NO

14954854

Stats

ATTORNEY / AGENT: (SPONSORED)

Importance

Loading Importance Indicators... loading....

Abstract

See full text

A voltage converter includes an output circuit having a high-side device and a low-side device which can be formed on a single die (a “PowerDie”). The high-side device can include a lateral diffused metal oxide semiconductor (LDMOS) while the low-side device can include a trench-gate vertical diffused metal oxide semiconductor (VDMOS). The voltage converter can further include a controller circuit on a different die which can be electrically coupled to, and co-packaged with the output circuit.

Loading the Abstract Image... loading....

First Claim

See full text

Family

Loading Family data... loading....

Patent Owner(s)

  • INTERSIL AMERICAS LLC

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hebert, Francois San Mateo, US 178 3171

Cited Art Landscape

Load Citation

Patent Citation Ranking

Forward Cite Landscape

Load Citation

Maintenance Fees

Fee Large entity fee small entity fee micro entity fee due date
7.5 Year Payment $3600.00 $1800.00 $900.00 Jul 23, 2025
11.5 Year Payment $7400.00 $3700.00 $1850.00 Jul 23, 2029
Fee Large entity fee small entity fee micro entity fee
Surcharge - 7.5 year - Late payment within 6 months $160.00 $80.00 $40.00
Surcharge - 11.5 year - Late payment within 6 months $160.00 $80.00 $40.00
Surcharge after expiration - Late payment is unavoidable $700.00 $350.00 $175.00
Surcharge after expiration - Late payment is unintentional $1,640.00 $820.00 $410.00