Embedded HKMG non-volatile memory
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United States of America Patent
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Jan 23, 2018
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app pub date -
Dec 14, 2015
filing date -
Dec 14, 2015
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Abstract
The present disclosure relates to an integrated circuit (IC) that includes a high-k metal gate (HKMG) non-volatile memory (NVM) device and that provides small scale and high performance, and a method of formation. In some embodiments, the integrated circuit includes a logic region and an embedded memory region disposed adjacent to the logic region. The logic region has a logic device disposed over a substrate and including a first metal gate disposed over a first high-k gate dielectric layer. The memory region has a non-volatile memory (NVM) device including a second metal gate disposed over a second high-k gate dielectric layer. By having HKMG structures in both the logic region and the memory region, IC performance is improved and further scaling becomes possible in emerging technology nodes.
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