Method of manufacturing semiconductor device

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 9876024
APP PUB NO 20170053931A1
SERIAL NO

15239193

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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A performance of a semiconductor device is improved. A film, which is made of silicon, is formed in a resistance element formation region on a semiconductor substrate, and an impurity, which is at least one type of elements selected from a group including a group 14 element and a group 18 element, is ion-implanted into the film, and a film portion which is formed of the film of a portion into which the impurity is ion-implanted is formed. Next, an insulating film with a charge storage portion therein is formed in a memory formation region on the semiconductor substrate, and a conductive film is formed on the insulating film.

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Patent Owner(s)

  • RENESAS ELECTRONICS CORPORATION

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Yamamoto, Yuki Tokyo, JP 266 2714
Yamashita, Tomohiro Tokyo, JP 129 885

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