FinFET isolation structure and method for fabricating the same

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United States of America Patent

PATENT NO 9876115
SERIAL NO

14935115

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Abstract

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A semiconductor device includes a semiconductor device and a semiconductor fin on the semiconductor substrate, in which the semiconductor fin has a fin isolation structure at a common boundary that is shared by the two cells. The fin isolation structure has a dielectric portion extending from a top of the semiconductor fin to a stop layer on the semiconductor substrate. The dielectric portion divides the semiconductor fin into two portions of the semiconductor fin.

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Patent Owner(s)

  • TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chang, Che-Cheng New Taipei, TW 401 2396
Lin, Chih-Han Hsinchu, TW 413 1895
Tseng, Horng-Huei Hsinchu, TW 445 4691

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