Method of chemical mechanical polishing of alumina
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United States of America Patent
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Jan 30, 2018
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app pub date -
Nov 2, 2016
filing date -
Aug 4, 2014
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Abstract
A CMP method uses a slurry including colloidal metal oxide or colloidal semiconductor oxide particles (colloidal particles) in water. At least one particle feature is selected from (i) the colloidal particles having a polydispersity >30%, and (ii) mixed particle types including the colloidal particles having an average primary size >50 nm mixed with fumed oxide particles having average primary size <25 nm. A substrate having an alumina surface is placed into a CMP apparatus, and CMP is performed with a rotating polishing pad and the slurry to polish the alumina surface. The polydispersity is determined by a polydispersity formula for a distribution width (w) involving width w1 and width w2 at a second larger particle size. The polydispersity formula=(w2−w1)×100/dav which includes 63% of a total of the colloidal particles by volume and day is an average particle size of the colloidal particles.
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