Method and apparatus for microwave assisted chalcogen radicals generation for 2-D materials

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United States of America Patent

PATENT NO 9879341
APP PUB NO 20160372351A1
SERIAL NO

15188103

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Abstract

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Embodiments described herein provide a remote plasma system utilizing a microwave source. Additionally, generation and deposition techniques for 2D transition metal chalcogenides with large area uniformity utilizing microwave assisted generation of radicals is disclosed. Plasma may be generated remotely utilizing the microwave source. A processing platform configured to deposit 2D transition metal chalcogenides is also disclosed.

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Patent Owner(s)

  • APPLIED MATERIALS, INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Agarwal, Ashutosh Jaipur, IN 48 423
Goel, Ashish Bangalore, IN 70 796
Jadhav, Deepak Hubli, IN 13 443
Parihar, Vijay Fremont, US 37 5317
Ping, Er-Xuan Fremont, US 221 2991
Singh, Kaushal K Santa Clara, US 42 4246
Thakur, Randhir P S Fremont, US 241 5317

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