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United States of America Patent
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Jan 30, 2018
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N/A
app pub date -
Nov 24, 2014
filing date -
Nov 27, 2013
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Abstract
A transistor includes a gate electrode over a substrate, an oxide semiconductor film overlapping with the gate electrode, a gate insulating film in contact with one surface of the oxide semiconductor film, and a pair of conductive films in contact with the oxide semiconductor film. A capacitor includes a metal oxide film over the gate insulating film and in contact with one of the pair of conductive films, an inorganic insulating film, and a first light-transmitting conductive film over the inorganic insulating film. A first gate line serving also as a gate electrode is connected so as to be able to select three sub-pixels of four sub-pixels, and a second gate line is connected so as to be able to select the remaining one of the four sub-pixels and also one sub-pixel in the next row.
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