Pattern formation method, pattern, and etching method, electronic device manufacturing method, and electronic device using same
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United States of America Patent
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Jan 30, 2018
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N/A
app pub date -
Feb 1, 2016
filing date -
Jul 31, 2013
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Abstract
There is provided a pattern formation method comprising: a step (i) for forming a first negative type pattern by performing the specific steps on a substrate; a step (iii) for forming a lower layer by embedding the specific resin composition (2) which contains a second resin in a region of the substrate in which no film part with the first negative type pattern is formed; a step (iv) for forming an upper layer on the lower layer using the specific actinic ray-sensitive or radiation-sensitive resin composition (3); a step (v) for exposing the upper layer to light; a step (vi) for developing the upper layer using a developer which includes an organic solvent and forming a second negative type pattern on the lower layer; and a step (vii) for removing a portion of the lower layer, in the stated order.
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