Cleaning composition and method for semiconductor device fabrication

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United States of America Patent

PATENT NO 9881816
APP PUB NO 20140216499A1
SERIAL NO

13757094

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Abstract

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A method of cleaning a substrate such as semiconductor substrate for IC fabrication is described that includes cleaning the semiconductor substrate with a mixture of ozone and one of an acid and a base. Exemplary acids and bases include HCl, HF, and NH4OH. The cleaning mixture may further include de-ionized water. In an embodiment, the mixture is sprayed onto a heated substrate surface.

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Patent Owner(s)

  • TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chou, Bo-Wei Hsinchu, TW 8 19
Ku, Shao-Yen Jhubei, TW 37 111
Li, Chia-Wen Hsinchu, TW 3 8
Ming-Jung, Chen Hsinchu, TW 1 5

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