Methods for fabricating integrated circuits with improved implantation processes

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United States of America Patent

PATENT NO 9881841
SERIAL NO

15074483

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Abstract

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Methods for fabricating integrated circuits are provided. In an embodiment, a method for fabricating an integrated circuit includes providing a structure having an n-channel gate stack and a p-channel gate stack formed over a semiconductor substrate. The method includes forming halo implant regions in the semiconductor substrate adjacent the p-channel gate stack and forming extension implant regions in the semiconductor substrate adjacent the p-channel gate stack. The method further includes annealing the halo implant regions and the extension implant regions in the semiconductor substrate adjacent the p-channel gate stack. Also, the method forms extension implant regions in the semiconductor substrate adjacent the n-channel gate stack.

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Patent Owner(s)

  • GLOBALFOUNDRIES INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Bazizi, El Mehdi Dresden, DE 33 42
Hoentschel, Jan Dresden, DE 218 2535
Yan, Ran Dresden, DE 54 301
Zaka, Alban Dresden, DE 32 65

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