Conductive connection structure having stress buffer layer

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United States of America Patent

PATENT NO 9881867
SERIAL NO

15409551

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Abstract

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A conductive connection structure includes a semiconductor substrate, a conductive pillar, and a stress buffer layer. The conductive pillar is in the semiconductor substrate. The stress buffer layer is between the semiconductor substrate and the conductive pillar. The conductive pillar has a protruding portion penetrating through the stress buffer layer.

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Patent Owner(s)

  • NANYA TECHNOLOGY CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Lin, Po-Chun Changhua County, TW 71 106

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