Metal oxide film and method for forming metal oxide film

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United States of America Patent

PATENT NO 9881939
SERIAL NO

14071932

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Abstract

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A metal oxide film including a crystal part and having highly stable physical properties is provided. The size of the crystal part is less than or equal to 10 nm, which allows the observation of circumferentially arranged spots in a nanobeam electron diffraction pattern of the cross section of the metal oxide film when the measurement area is greater than or equal to 5 nmφ and less than or equal to 10 nmφ.

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Patent Owner(s)

Patent OwnerAddress
SEMICONDUCTOR ENERGY LABORATORY CO LTDJAPAN'S KANAGAWA PREFECTURE ATSUGI CITY ATSUGI-SHI KANAGAWA

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hirohashi, Takuya Kanagawa, JP 84 2642
Ishihara, Noritaka Kanagawa, JP 52 626
Oota, Masashi Kanagawa, JP 63 804
Takahashi, Masahiro Kanagawa, JP 465 6469
Tsubuku, Masashi Kanagawa, JP 270 5504

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