Device and system of a silicon controlled rectifier (SCR)

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United States of America Patent

PATENT NO 9882003
SERIAL NO

15206532

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Abstract

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Some demonstrative embodiments include devices and/or systems of a Silicon Controlled Rectifier (SCR). For example, a silicon controlled rectifier (SCR) may include a metal-oxide-semiconductor field-effect transistor (MOSFET), the MOSFET may include a gate; an N-type source region; a non-Lightly Doped Drain (LDD) N-type drain region; and a P-Well region extending between the N-type source region and the non-LDD N-type drain region, and extending between the non-LDD N-type drain region and a drain region of the gate.

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Patent Owner(s)

Patent OwnerAddress
TOWER SEMICONDUCTOR LTDMIGDAL HAEMEK

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Aharoni, Efraim Haifa, IL 2 43

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