Semiconductor device and manufacturing method thereof

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United States of America Patent

PATENT NO 9882013
SERIAL NO

15086072

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Abstract

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Provided is a semiconductor device including a gate electrode, source and drain regions, and a spacer. The gate electrode is located over a substrate, and an angle of a base corner of the gate electrode is greater than 90 degrees. The source and drain regions are located in the substrate at sides of the gate electrode. The spacer is located at a sidewall of the gate electrode.

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Patent Owner(s)

  • TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chang, Kuo Hui Taoyuan, TW 7 22
Lin, Mu-Tsang Changhua County, TW 47 256
Lu, Jung-Wang Taipei, TW 2 5

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