Semiconductor device with a tunneling layer having a varying nitrogen concentration, and method of manufacturing the same
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United States of America Patent
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Jan 30, 2018
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app pub date -
May 15, 2015
filing date -
Aug 6, 2014
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Abstract
A semiconductor device includes: a substrate including a channel region; a gate dielectric a tunneling layer, a charge storage layer, and a blocking layer sequentially disposed on the channel region; and a gate electrode disposed on the gate dielectric, wherein the tunneling layer has variations in nitrogen concentrations in a direction perpendicular to the channel region, and has a maximum nitrogen concentration in a position shifted from a center of the tunneling layer toward the charge storage layer.
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