Method for manufacturing transistor with SiCN/SiOCN multilayer spacer

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 9882022
SERIAL NO

15592150

Stats

ATTORNEY / AGENT: (SPONSORED)

Importance

Loading Importance Indicators... loading....

Abstract

See full text

A semiconductor device and a method for manufacturing the same are provided in the present invention. The semiconductor device includes a substrate, a gate structure on the substrate and two spacers on both sidewalls of the gate structure. Each spacer comprises an inner first spacer portion made of SiCN and an outer second spacer portion made of SiOCN.

Loading the Abstract Image... loading....

First Claim

See full text

Family

Loading Family data... loading....

Patent Owner(s)

  • UNITED MICROELECTRONICS CORP.

International Classification(s)

  • [Classification Symbol]
  • [Patents Count]

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chuang, Fu-Jung Kaohsiung, TW 20 31
Chuang, Po-Jen Kaohsiung, TW 24 246
Kuo, Chia-Ming Kaohsiung, TW 61 668
Lu, Tsuo-Wen Kaohsiung, TW 48 437
Tsai, Fu-Yu Tainan, TW 48 58
Wang, Yu-Ren Tainan, TW 131 547
Wen, Tsai-Yu Tainan, TW 28 118

Cited Art Landscape

Load Citation

Patent Citation Ranking

Forward Cite Landscape

Load Citation

Maintenance Fees

Fee Large entity fee small entity fee micro entity fee due date
7.5 Year Payment $3600.00 $1800.00 $900.00 Jul 30, 2025
11.5 Year Payment $7400.00 $3700.00 $1850.00 Jul 30, 2029
Fee Large entity fee small entity fee micro entity fee
Surcharge - 7.5 year - Late payment within 6 months $160.00 $80.00 $40.00
Surcharge - 11.5 year - Late payment within 6 months $160.00 $80.00 $40.00
Surcharge after expiration - Late payment is unavoidable $700.00 $350.00 $175.00
Surcharge after expiration - Late payment is unintentional $1,640.00 $820.00 $410.00