Transistor and electronic device

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 9882064
SERIAL NO

15451707

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Abstract

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A transistor capable of high-speed operation is provided. In a transistor including a back gate electrode, the back gate electrode is provided over a back gate wiring. A gate wiring and the back gate wiring are apart from each other; thus, the parasitic capacitance between the gate wiring and the back gate wiring is reduced and withstand voltage is improved. In addition, the width of the back gate electrode is smaller than a channel width; thus, the parasitic capacitance between the gate wiring and the back gate electrode is reduced and withstand voltage is improved.

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Patent Owner(s)

  • SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Yamazaki, Shunpei Setagaya, JP 7285 226692

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