High speed photodetector

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United States of America Patent

PATENT NO 9882080
APP PUB NO 20160172523A1
SERIAL NO

14943723

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Abstract

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A photodetector is disclosed. A first layer of the photodetector has a first semiconductor material having a first band gap energy, a first electric field, and a first doping concentration. A second layer has a second semiconductor material having a second band gap energy higher than the first band gap energy, a non-zero second electric field smaller than the first electric field, and a second doping concentration. The second layer is interfaced with the first layer. A region between the first and second layers has a third doping concentration.

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Patent Owner(s)

  • MELLANOX TECHNOLOGIES LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chacinski, Marek Grzegorz Farsta, SE 5 3
Chitica, Nicolae Pantazi Kista, SE 6 7

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