III nitride semiconductor light-emitting device

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United States of America Patent

PATENT NO 9882088
SERIAL NO

15066234

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Abstract

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A long-life III nitride semiconductor light emitting device and a method of producing the same. A III nitride semiconductor light-emitting device includes an n-type semiconductor layer; a light emitting layer containing at least Al; and a p-type semiconductor layer obtained by sequentially stacking an electron blocking layer, a p-type cladding layer, and a p-type contact layer, in this order. The electron blocking layer is made of AlxGa1-xN (0.55≦x≦1.0), the p-type contact layer is made of AlyGa1-yN (0≦y≦0.1), the p-type cladding layer is made of AlzGa1-zN having an Al content z which gradually decreases over the whole thickness of the p-type cladding layer from the electron blocking layer side toward the p-type contact layer side, and the reduction rate of the Al content z of the p-type cladding layer in the thickness direction is 0.01/nm or more and 0.025/nm or less.

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Patent Owner(s)

Patent OwnerAddress
DOWA ELECTRONICS MATERIALS CO LTDCHIYODA-KU TOKYO 101-0021

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Fujita, Takehiko Tokyo, JP 24 978
Watanabe, Yasuhiro Tokyo, JP 262 2220

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