Method for producing an optoelectronic device with a contact area of accurately and reproducibily defined size
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United States of America Patent
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Jan 30, 2018
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app pub date -
Apr 24, 2014
filing date -
May 14, 2013
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Abstract
A method for producing an optoelectronic component is disclosed. A first layer which has a dielectric to the surface of a semiconductor crystal. A photoresist layer is applied and structured on the first layer. The photoresist layer is structured in such a way that the photoresist layer has an opening, The first layer is partially separated in order to expose a lateral region of the surface. A contact area having a first metal is applied in the lateral region of the surface. The photoresist layer is removed. A second layer, which comprises an optically transparent, electrically conductive material, and a third layer, which comprises a second metal, are applied.
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