Magnetic memory devices including in-plane current layers

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United States of America Patent

PATENT NO 9882120
SERIAL NO

14956766

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Abstract

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A magnetic memory device can include an upper electrode, a lower electrode and a Magnetic Tunnel Junction (MTJ). The MTJ can include a reference magnetic pattern configured to generate a fixed magnetization and a free magnetic pattern on the reference magnetic pattern configured to generate a switchable magnetization that switches direction between parallel and anti-parallel to the fixed magnetization. A metal pattern can be on the free magnetic pattern and can be configured to conduct an in-plane current and a perpendicular-to-plane to/from the upper electrode.

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Patent Owner(s)

  • SAMSUNG ELECTRONICS CO., LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Ahn, Sungmin Suwon-Si, KR 8 8
Ryu, Jisu Hwaseong-Si, KR 10 7

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