Wafer producing method
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United States of America Patent
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Feb 6, 2018
Issued Date -
N/A
app pub date -
Dec 1, 2015
filing date -
Dec 4, 2014
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Abstract
A hexagonal single crystal wafer is produced from a hexagonal single crystal ingot. The wafer producing method includes a separation start point forming step of setting the focal point of a laser beam to the inside of the ingot at a predetermined depth from the upper surface of the ingot, which depth corresponds to the thickness of the wafer to be produced, and next applying the laser beam to the upper surface of the ingot while relatively moving the focal point and the ingot to thereby form a modified layer parallel to the upper surface of the ingot and cracks extending from the modified layer, thus forming a separation start point. A plate-shaped member having a thickness corresponding to the thickness of the wafer is separated from the ingot at the separation start point after performing the separation start point forming step, thus producing the wafer from the ingot.
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