Ultra-low drain-source resistance power MOSFET
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United States of America Patent
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Feb 6, 2018
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app pub date -
Feb 11, 2008
filing date -
Mar 21, 2006
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Abstract
Ultra-low drain-source resistance power MOSFET. In accordance with an embodiment of the preset invention, a semiconductor device comprises a plurality of trench power MOSFETs. The plurality of trench power MOSFETs is formed in a second epitaxial layer. The second epitaxial layer is formed adjacent and contiguous to a first epitaxial layer. The first epitaxial layer is formed adjacent and contiguous to a substrate highly doped with red Phosphorus. The novel red Phosphorus doped substrate enables a desirable low drain-source resistance.
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