Tantalum sputtering target, method for manufacturing same, and barrier film for semiconductor wiring formed by using target

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United States of America Patent

PATENT NO 9890452
SERIAL NO

14384749

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Abstract

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Provided is a tantalum sputtering target, which is characterized that an average crystal grain size of the target is 50 μm or more and 200 μm or less, and variation of a crystal grain size in the target plane is 40% or higher and 60% or less. This invention aims to provide a tantalum sputtering target capable of improving the uniformity of the film thickness and reducing the variation of the resistance value (sheet resistance).

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Patent Owner(s)

  • JX NIPPON MINING & METALS CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Nagatsu, Kotaro Ibaraki, JP 15 40
Senda, Shinichiro Ibaraki, JP 15 93

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