Pattern forming method

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United States of America Patent

PATENT NO 9891526
SERIAL NO

15000966

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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A pattern-forming method includes applying an inorganic film-forming composition on an upper face side of a substrate to provide an inorganic film, forming a resist pattern on an upper face side of the inorganic film; and dry-etching once or several times using the resist pattern as a mask such that the substrate has a pattern The inorganic film-forming composition includes a polyacid or a salt thereof, and an organic solvent. The step for forming a resist pattern may include the steps of: applying a resist composition on an upper face side of the inorganic film to provide a resist film; exposing the resist film; and developing the resist film exposed.

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Patent Owner(s)

  • JSR CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kimura, Toru Tokyo, JP 130 1141
Kurita, Shunsuke Tokyo, JP 11 14
Takanashi, Kazunori Tokyo, JP 23 48
Takimoto, Yoshio Tokyo, JP 20 77

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