Method and apparatus providing improved thermal conductivity of strain relaxed buffer
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United States of America Patent
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Feb 13, 2018
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N/A
app pub date -
Jan 12, 2017
filing date -
Jun 22, 2015
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Abstract
A structure includes a substrate and a strain relaxed buffer (SRB) that has a bottom surface disposed on the substrate and an opposite top surface. The SRB is formed to have a plurality of pairs of layers, where a given pair of layers is composed of a layer of Si1-xGex and a layer of Si. The structure further includes a plurality of transistor devices formed above the top surface of the SRB and at least one contact disposed vertically through the top surface of the SRB and partially through a thickness of the SRB. The at least one contact is thermally coupled to at least one of the plurality of the Si layers for conducting heat out of the SRB via the at least one of the plurality of Si layers. A method to form the structure is also disclosed.
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