Manufacturing method of selectively etched DMOS body pickup

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United States of America Patent

PATENT NO 9893170
SERIAL NO

15356511

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Abstract

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A method for fabricating a LDMOS device in a well region of a semiconductor substrate, including: forming a body region and a source layer in the well region through a window of a polysilicon layer above the well region, wherein the body region has a deeper junction depth than the source layer; forming spacers at side walls of the polysilicon layer; and etching through the source layer through a window shaped by the spacers, wherein the source layer under the spacers is protected from etching, and is defined as source regions of the LDMOS device.

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Patent Owner(s)

Patent OwnerAddress
MONOLITHIC POWER SYSTEMS INC79 GREAT OAKES BLVD SAN JOSE CA 95119

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Jung, Jeesung San Jose, US 16 61
McGregor, Joel M Issaquah, US 14 98
Yoo, Ji-Hyoung Los Gatos, US 33 193

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