Silicon-carbide trench gate MOSFETs

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United States of America Patent

PATENT NO 9893176
SERIAL NO

15275184

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Abstract

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In a general aspect, an apparatus can include a silicon carbide (SiC) trench gate MOSFET with improved operation due, at least in part, to a reduced gate capacitance. In the SiC trench gate MOSFET, a thick gate oxide can be formed on a bottom surface of the gate trench and a built-in channel, having a vertical portion and a lateral portion, can be formed to electrically connect a vertical inversion-layer channel, such as in a channel stopper layer, to a vertical JFET channel region and a drift region.

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Patent Owner(s)

Patent OwnerAddress
TRANSIC ABISAFJORDSGATAN 32C LEVEL 6 KISTA 164 40

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Konstantinov, Andrei Sollentuna, SE 41 424

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