CASCODED HIGH VOLTAGE JUNCTION FIELD EFFECT TRANSISTOR

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United States of America Patent

SERIAL NO

14276995

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Abstract

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A cascoded junction field transistor (JFET) device comprises a first stage high voltage JFET cascoded to a second stage low voltage JFET wherein one of the first and second stages JFET is connected to a drain electrode of another JFET stage.

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Patent Owner(s)

Patent OwnerAddress
ALPHA AND OMEGA SEMICONDUCTOR INCORPORATED475 OAKMEAD PKWY SUNNYVALE CA 94085

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Tsuchiko, Hideaki San Jose, US 25 332

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