Light element doped low magnetic moment material spin torque transfer MRAM
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United States of America Patent
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Feb 13, 2018
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app pub date -
Apr 8, 2016
filing date -
Apr 8, 2016
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Abstract
Techniques relate to forming a semiconductor device. A magnetic pinned layer is formed adjacent to a tunnel barrier layer. A magnetic free layer is formed adjacent to the tunnel barrier layer, such that the tunnel barrier layer is sandwiched between the magnetic pinned layer and the magnetic free layer. The magnetic free layer includes a first magnetic layer, a second magnetic layer disposed on top of the first magnetic layer, and a third magnetic layer disposed on top of the second magnetic layer. The second magnetic layer of the magnetic free layer includes an additional material, and the additional material is a selection of at least one of Be, Mg, Al, Ca, B, C, Si, V, Cr, Ti, and Mn.
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