Method of manufacturing semiconductor device, method of cleaning interior of process chamber, substrate processing apparatus, and recording medium
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United States of America Patent
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Feb 20, 2018
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app pub date -
Sep 22, 2016
filing date -
Sep 28, 2015
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Abstract
A method of manufacturing a semiconductor device is disclosed. The method includes processing a substrate by supplying a process gas to the substrate in a process chamber. The method further includes performing a purge to an interior of the process chamber while periodically changing an internal pressure of the process chamber based on a pressure width by setting a process of supplying a purge gas into the process chamber to increase the internal pressure of the process chamber and a process of vacuum-exhausting an interior of the process chamber to decrease the internal pressure of the process chamber to one cycle and repeating the cycle a plurality of times.
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