Method for producing III-N single crystals, and III-N single crystal

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United States of America Patent

PATENT NO 9896779
APP PUB NO 20150292111A1
SERIAL NO

14386833

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Abstract

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The present invention relates to the production of III-N templates and also the production of III-N single crystals, III signifying at least one element of the third main group of the periodic table, selected from the group of Al, Ga and In. By adjusting specific parameters during crystal growth, III-N templates can be obtained that bestow properties on the crystal layer that has grown on the foreign substrate which enable flawless III-N single crystals to be obtained in the form of templates or even with large III-N layer thickness.

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Patent Owner(s)

  • FREIBERGER COMPOUND MATERIALS GMBH

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Brunner, Frank Berlin, DE 2 7
Gründer, Marit Berlin, DE 2 7
Habel, Frank Freiberg, DE 27 813
Richter, Eberhard Berlin, DE 7 41
Weyers, Markus Wildau, DE 13 93

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