One time programmable (OTP) cell and an OTP memory array using the same

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United States of America Patent

PATENT NO 9899100
SERIAL NO

15599241

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Abstract

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An anti-fuse device includes a gate insulating film formed on a semiconductor substrate, a gate electrode formed on the gate insulating film, and a salicide layer formed on a first portion of the gate electrode such that a second portion of the gate electrode omits the salicide layer, wherein a hard breakdown of at least a portion of the gate insulating film at a time of programming the anti-fuse device.

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Patent Owner(s)

Patent OwnerAddress
MAGNACHIP MIXED-SIGNAL LTD76 JIKJI-DAERO 436BEON-GIL (JIKJI SMART TOWER) HEUNGDEOK-GU CHUNGCHEONGBUK-DO CHEONGJU-SI 28581

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Jeong, Duk Ju Seoul, KR 20 53
Kim, Su Jin Cheonan-si, KR 106 761

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