Method of manufacturing semiconductor device, substrate processing apparatus and non-transitory computer-readable recording medium
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United States of America Patent
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Feb 20, 2018
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N/A
app pub date -
Feb 4, 2015
filing date -
Mar 9, 2012
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Abstract
A method of manufacturing a semiconductor device, includes: forming a film on a substrate by performing a cycle a predetermined number of times, the cycle including: supplying a raw material gas to a substrate in a process chamber, exhausting the raw material gas remaining in the process chamber through an exhaust line, supplying an amine-based gas; and exhausting the amine-based gas through the exhaust line with the supply of the amine-based gas stopped. A degree of valve opening of an exhaust valve disposed in the exhaust line is changed in multiple steps in the process of exhausting the amine-based gas.
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